(Hong Kong)
Product Summary
The MJ802 is a silicon Epitaxial-Base power transistor mounted in Jedec TO-3 metal case. It is intended for general purpose power amplifier and switching applications.
Parametrics
MJ802 absolute maximum ratings: (1)VCEO Collector-emitter Voltage (IB = 0): 90 V; (2)VCBO Collector-base Voltage (IE = 0): 100 V; (3)VEBO Emitter-Base Voltage (IC = 0): 4 V; (4)IC Collector Current: 30 A; (5)IB Base Current: 7.5 A; (6)Ptot Total Dissipation at Tc ≤ 25 ℃: 200 W; (7)Tstg Storage Temperature: -65 to 200 ℃; (8)Tj Max. Operating Junction Temperature: 200 ℃.
Features
MJ802 features: (1)STMicroelectronics preferred sales type.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 MJ802 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN Darlington Power |
Data Sheet |
Negotiable |
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MJ802G |
ON Semiconductor |
Transistors Bipolar (BJT) 30A 90V 200W NPN |
Data Sheet |
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