(Hong Kong)
Product Summary
The 2SD2627 is an NPN Triple Diffused Planar Silicon Transistor.
Parametrics
2SD2627 absolute maximum ratings: (1)Collector-to-Base Voltage, VCBO: 1500 V; (2)Collector-to-Emitter Voltage, VCEO: 800 V; (3)Emitter-to-Base Voltage, VEBO: 6V; (4)Collector Current, IC: 6A; (5)Collector Current (Pulse), ICP: 15 A; (6)Collector Dissipation, PC: 2.0 W; Tc=25℃: 30W; (7)Junction Temperature, Tj: 150℃; (8)Storage Temperature, Tstg: -55 to +150℃.
Features
2SD2627 features: (1)High speed; (2)High breakdown voltage(VCBO=1500V); (3)High reliability(Adoption of HVP process); (4)Adoption of MBIT process; (5)On-chip damper diode.
Diagrams
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Pricing (USD) |
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 2SD2627 |
Other |
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Data Sheet |
Negotiable |
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2SD2627LS |
Other |
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Data Sheet |
Negotiable |
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