(Hong Kong)
Product Summary
The FB31N20D is a power MOSFET. It is suitable for High Frequency DC-DC converters and Lead-Free.
Parametrics
FB31N20D absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 31A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 21 A; (3)IDM, Pulsed Drain Current: 124A; (4)PD @TA = 25℃, Power Dissipation: 3.1 W; (5)PD @TC = 25℃, Power Dissipation: 200W; (6)Linear Derating Factor: 1.3 W/℃; (7)VGS Gate-to-Source Voltage: ± 30 V; (8)dv/dt Peak Diode Recovery dv/dt: 2.1 V/ns; (9)TJ, TSTG, Operating Junction and storage temperature range: -55 to + 175℃; (10)Soldering Temperature, for 10 seconds: 300℃ (1.6mm from case).
Features
FB31N20D features: (1)Low Gate to Drain to Reduce Switching Losses; (2)Fully Characterized Capacitance Including Effective COSS to Simplify Design; (3)Fully Characterized Avalanche Voltage and Current.
Diagrams
