Product Summary
The FAIRCHILD is a 1200 V NPT Trench IGBT. Using Fairchild’s proprietary trench design and advanced NPT technology, it offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. The FAIRCHILD is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.
Parametrics
FAIRCHILD absolute maximum ratings: (1)VCES Collector-Emitter Voltage: 1200 V; (2)VGES Gate-Emitter Voltage: ± 20 V; (3)IC Collector Current @ TC = 25℃: 50 A; (4)Collector Current @ TC = 100℃: 25 A; (5)ICM Pulsed Collector Current: 75 A; (6)IF Diode Continuous Forward Current @ TC = 100℃: 25 A; (7)IFM Diode Maximum Forward Current: 150 A; (8)PD Maximum Power Dissipation @ TC = 25℃: 312 W; (9)Maximum Power Dissipation @ TC = 100℃: 125 W; (10)TJ Operating Junction Temperature: -55℃ to +150℃; (11)Tstg Storage Temperature Range: -55℃ to +150℃; (12)TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds: 300℃.
Features
FAIRCHILD features: (1)NPT Trench Technology, Positive temperature coefficient; (2)Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25℃; (3)Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25℃; (4)Extremely enhanced avalanche capability.
Diagrams
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FGA25N120ANTD |
Other |
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Negotiable |
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FGA25N120ANTDTU |
Fairchild Semiconductor |
IGBT Transistors Copak Discrete |
Data Sheet |
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FGA25N120ANTDTU_F109 |
Fairchild Semiconductor |
IGBT Transistors Copak Discrete |
Data Sheet |
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