Product Summary

The 2SK209-GR is a TOSHIBA Field Effect Transistor, Silicon N Channel Junction Type. It is designed for Audio Frequency Low Noise Amplifier Applications.

Parametrics

2SK209-GR absolute maximum ratings: (1)Gate-drain voltage VGDS: -50 V; (2)Gate current IG: 10 mA; (3)Drain power dissipation PD: 150 mW; (4)Junction temperature Tj: 125 ℃; (5)Storage temperature range Tstg: -55 to 125 ℃.

Features

2SK209-GR features: (1)High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0; (2)High breakdown voltage: VGDS = -50 V; (3)Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ; (4)High input impedance: IGSS = -1 nA (max) at VGS = -30 V; (5)Small package.

Diagrams

2SK209-GR dimensions

2SK2002-01MR
2SK2002-01MR

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Data Sheet

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2SK2003-01MR
2SK2003-01MR

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2SK2007
2SK2007

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Data Sheet

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2SK2008
2SK2008

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2SK2009
2SK2009

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2SK2010
2SK2010

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Data Sheet

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