(Hong Kong)
Product Summary
The 2SK209-GR is a TOSHIBA Field Effect Transistor, Silicon N Channel Junction Type. It is designed for Audio Frequency Low Noise Amplifier Applications.
Parametrics
2SK209-GR absolute maximum ratings: (1)Gate-drain voltage VGDS: -50 V; (2)Gate current IG: 10 mA; (3)Drain power dissipation PD: 150 mW; (4)Junction temperature Tj: 125 ℃; (5)Storage temperature range Tstg: -55 to 125 ℃.
Features
2SK209-GR features: (1)High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0; (2)High breakdown voltage: VGDS = -50 V; (3)Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ; (4)High input impedance: IGSS = -1 nA (max) at VGS = -30 V; (5)Small package.
Diagrams
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 2SK2002-01MR |
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2SK2003-01MR |
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2SK2007 |
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2SK2008 |
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2SK2009 |
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2SK2010 |
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