2SK2698

TOSHIBA field effect transistor, silicon N channel MOS type, 500V, 15A, 2-16C1B, 0.35 Ω

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Price:: US $0.10~0.20 / piece [Get Latest Price]

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PartNumber:: 2SK2698

Brand:: Toshiba Semiconductor - Toshiba | Pack: DIP | D/C: 11+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-01-18

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Part Number:2SK2698
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Product Summary

The 2SK2698 is a TOSHIBA field effect transistor silicon N channel MOS type. It is designed for DC8722; DC Converter, Relay Drive and Motor Drive Applications.

Parametrics

2SK2698 maximum ratings: (1)Drain-source-voltage VDSS: 500 V; (2)Drain-gate-voltage (RGS = 20 kΩ) VDGR: 500V; (3)Gate-source voltage VGSS: ±30 V; (4)DC ID: 15 A; (5)Drain current Pulse IDP: 60 A; (6)Drain power dissipation (Tc = 25℃) PD: 150 W; (7)Single pulse avalanche energy: EAS 630 mJ; (8)Avalanche current IAR: 15 A; (9)Repetitive avalanche energy EAR: 15 mJ; (10)Channel temperature Tch: 150 ℃; (11)Storage temperature range Tstg: -55 to 150 ℃.

Features

2SK2698 features: (1)Low drain-source ON resistance : RDS (ON) = 0.35 Ω (typ.); (2)High forward transfer admittance : |Yfs| = 11 S (typ.); (3)Low leakage current: IDSS = 100 μA (max) (VDS = 500 V); (4)Enhancement.mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA).