SST39VF1601

Product Summary

The SST39VF1601 device is a 1M x16, 2M x16, and 4M x16 respectively, CMOS Multi-Purpose Flash Plus (MPF+)manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF1601 write (Program or Erase) with a 2.7-3.6V power supply. The SST39VF1601 conforms to JEDEC standard pinouts for x16 memories. Featuring high performance Word-Program, the SST39VF1601 device provides a typical Word-Program time of 7 μsec. The SST39VF1601 uses Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years.

Parametrics

SST39VF1601 absolute maximum ratings: (1)Temperature Under Bias:-55℃ to +125℃; (2)Storage Temperature:-65℃ to +150℃; (3)D. C. Voltage on Any Pin to Ground Potential: -0.5V to VDD+0.5V; (4)Transient Voltage (<20 ns) on Any Pin to Ground Potential:-2.0V to VDD+2.0V; (5)Voltage on A9 Pin to Ground Potential:-0.5V to 13.2V; (6)Package Power Dissipation Capability (Ta = 25℃):1.0W; (7)Surface Mount Lead Soldering Temperature (3 Seconds):240℃; (8)Output Short Circuit Current:50 mA.

Features

SST39VF1601 features: (1)Single Voltage Read and Write Operations:2.7-3.6V ; (2)Superior Reliability:Endurance: 100,000 Cycles (Typical), Greater than 100 years Data Retention; (3)Low Power Consumption (typical values at 5 MHz): Active Current: 9 mA (typical), Standby Current: 3 μA (typical), Auto Low Power Mode: 3 μA (typical); (4)Hardware Block-Protection/WP# Input Pin: Bottom Block-Protection (bottom 32 KWord); (5)Sector-Erase Capability:Uniform 2 KWord sectors; (6)Block-Erase Capability:Uniform 32 KWord blocks; (7)Chip-Erase Capability; (8)Erase-Suspend/Erase-Resume Capabilities; (9)Hardware Reset Pin (RST#); (10)Security-ID Feature:SST: 128 bits; User: 128 bits; (11)Fast Read Access Time::70 ns, 90 ns; (12)Latched Address and Data; (13)Fast Erase and Word-Program: Sector-Erase Time: 18 ms (typical), Block-Erase Time: 18 ms (typical), Chip-Erase Time: 40 ms(typical), Word-Program Time: 7 μs (typical); (14)Automatic Write Timing:Internal VPP Generation; (15)End-of-Write Detection: Toggle Bits, Data# Polling; (16)CMOS I/O Compatibility ; (17)JEDEC Standard: Flash EEPROM Pinouts and command sets.

Diagrams