(Hong Kong)
Product Summary
The MRF255 is a RF power field effect transistor with N channel enhancement mode. It is designed for broadband commercial and industrial applications at frequencies to 54 MHz. The high gain, broadband performance and linear characterization of the MRF255 makes it ideal for large–signal, common source amplifier applications in 12.5 Volt mobile and base station equipment.
Parametrics
MRF255 absolute maximum ratings: (1)Drain–Source Voltage VDSS: 36 Vdc; (2)Drain–Gate Voltage (RGS = 1.0 MW) VDGR: 36 Vdc; (3)Gate–Source Voltage VGS: ±20 Vdc; (4)Drain Current — Continuous ID: 22 Adc; (5)Total Device Dissipation @ TC = 25℃. Derate above 25℃ PD: 175Watts; (6)Storage Temperature Range Tstg: –65 to +150 ℃; (7)Operating Junction Temperature TJ: 200 ℃.
Features
MRF255 features: (1)Guaranteed Performance at 54 MHz, 12.5 Volts; (2)Characterized with Series Equivalent Large Signal Impedance Parameters; (3)Excellent Thermal Stability; (4)All Gold Metal for Ultra Reliability; (5)Aluminum Nitride Package Electrical Insulator; (6)Circuit Board Photomaster Available by Ordering Document MRF255PHT/D from Motorola Literature Distribution.
Diagrams
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 MRF255 |
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MRF20030 |
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MRF20030R |
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MRF20060 |
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MRF20060_1248487 |
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MRF20060R |
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MRF20060RS |
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