Product Summary
The IRFZ46 Advanced HEXFET Power MOSFET from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized the device design that HEXFET power MOSFET IRFZ46 is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRFZ46 absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 53 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 37 A; (3)IDM Pulsed Drain Current: 180 A; (4)PD @TC = 25℃ Power Dissipation: 107 W; (5)Linear Derating Factor: 0.71 W/℃; (6)Gate-to-Source Voltage: ± 20 V; (7)Avalanche Current: 28 A; (8)Repetitive Avalanche Energy: 11 mJ; (9)Peak Diode Recovery dv/dt: 5.0 V/ns; (10)Operating Junction and Storage Temperature Range: -55 to + 175 ℃; (11)Soldering Temperature, for 10 seconds: 300 (1.6mm from case )℃; (12)Mounting torque, 6-32 or M3 srew: 10 lbf.in (1.1N·m)℃.
Features
IRFZ46 features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRFZ46 |
Vishay/Siliconix |
MOSFET N-Chan 60V 50 Amp |
Data Sheet |
Negotiable |
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IRFZ46, SiHFZ46 |
Other |
Data Sheet |
Negotiable |
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IRFZ46NLPBF |
International Rectifier |
MOSFET MOSFT 55V 53A 16.5mOhm 48nC |
Data Sheet |
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IRFZ46N |
International Rectifier |
MOSFET MOSFET, 55V, 46A, 16.5 mOhm, 48 nC Qg, TO-220AB |
Data Sheet |
Negotiable |
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IRFZ46L |
MOSFET N-CH 50V 50A D2PAK |
Data Sheet |
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IRFZ46NL |
MOSFET N-CH 55V 53A TO-262 |
Data Sheet |
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IRFZ46NPBF |
International Rectifier |
MOSFET MOSFT 55V 46A 16.5mOhm 48nC |
Data Sheet |
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IRFZ46NSTRLPBF |
International Rectifier |
MOSFET MOSFT 55V 53A 16.5mOhm 48nC |
Data Sheet |
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