Product Summary

The TF541M is a 5A thyristor.

Parametrics

TF541M absolute maximum ratings: (1)Repetitive peak off-state voltage VDRM: 400V; (2)Repetitive peak reverse voltage VRRM: 400V; (3)Non-repetitive peak off-state voltage VDSM: 500V; (4)Non-repetitive peak reverse voltage VRSM: 500V; (5)Average on-state current IT(AV): 5.0A; (6)RMS on-state current IT(RMS): 7.8A; (7)Surge on-state current ITSM: 80A; (8)Peak forward gate current IFGM: 2.0A; (9)Peak forward gate voltage VFGM: 10V; (10)Peak reverse gate voltage VRGM: 5.0V; (11)Peak gate power loss PGM: 5.0W; (12)Average gate power loss PG(AV): 0.5W; (13)Junction temperature Tj: –40 to +125℃; (14)Storage temperature Tstg: –40 to +125℃.

Features

TF541M features: (1)Repetitive peak off-state voltage: VDRM=200, 400, 600V; (2)Average on-state current: IT(AV)=5A; (3)lGate trigger current: IGT=15mA max.

Diagrams

TF541M dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
TF541M
TF541M

Other


Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
TF541M
TF541M

Other


Data Sheet

Negotiable 
TF541S-A
TF541S-A

Other


Data Sheet

Negotiable 
TF541S
TF541S

Other


Data Sheet

Negotiable