Product Summary

The P60N06 is an N - channel enhancement mode power MOS transistor. The applications of the device include high current, high speed switching, solenoid and relay drivers, regulators, DC-DC & DC-AC converters, motor control, audio amplifiers and automotive environment (injection,abs, air-bag, lampdrivers, etc.).

Parametrics

P60N06 absolute maximum ratings: (1)VDS, Drain-Source Voltage (Vgs = 0): 50V; (2)VDGR, Drain-Gate Voltage (Rgs = 20 KΩ):50V; (3)VGS, Gate-Source Voltage: ± 20 V; (4)ID, Drain-Current (continuous) at Tc = 25℃: 60A; (5)ID, Drain-Current (continuous) at Tc = 100℃: 50A; (6)IDM, Drain-Current (Pulsed): 240 A; (7)Ptot, Total Dissipation at Tc = 25℃: 150 W/℃; (8)Derating Factor: 1 ℃; (9)Tstg, Storage Temperature: -65 to 175℃; (10)Tj Max Operating Junction Temperature: 175℃.

Features

P60N06 features: (1)typical RDS(on) = 0.012Ω; (2)avalanche rugged technology; (3)100% avalanche tested; (4)repetitive avalanche data at 100℃; (5)low gate charge; (6)high current capability; (7)175℃ operating temperature; (8)very low RDS (on); (9)application oriented characterization.

Diagrams

P60N06 internal schematic diagram